bipolarics, inc. part number b15v180 0 8 v cbo collector-base voltage 25 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 1.5 v i c collector current (continuous) 240 ma i c collector current (instantaneous) 360 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c symbol parameters rating units max symbol parameters & conditions unit min. typ. max. v ce = 8v, i c =120 ma, class a, unless stated f t gain bandwidth product ghz 8.0 |s 21 | 2 insertion power gain: f = 1.0 ghz db 14.2 f = 2.0 ghz db 8.2 p 1d b power output at 1db compression: f = 1.0 ghz dbm 30.0 nf noise figure: v ce = 5v, i c =20 ma f = 1.0 ghz db 1.6 h fe forward current transfer ratio: v ce = 5v, i c = 30 ma 30 100 300 i cbo collector cutoff current : v cb = 8v a 0.8 c cb collector base capacitance: v cb =8v f = 1mhz pf .75 i c = 150 ma silicon microwave power transistor absolute maximum ratings: product data sheet features: high gain bandwidth product f t = 8 ghz typ @ i c = 140 ma high gain |s 21 | 2 = 14.2 db @ 1.0 ghz 8.2 db @ 2.0 ghz performance d ata: electrical characteristics (t a = 25 o c) description and applications: bipolarics' b15v180 0 8 is a high performance silicon bipolar transistor intended for power linear and class c applications at vhf, uhf and microwave frequencies in 7.2 and 12v systems. because of the innovative package design the b15v180 0 8 can operate at up to 1.5w on a footprint less than 20 mm . these applications include high intermod receivers, catv and instrumentation amplifiers as well as drivers and gain stages in transmitters of pagers cellular telephone and pcn device. 2
page 2 freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db 0.20000 0.6456 -156 17.78 124 0.0169 46 0.3090 -102 25.0 0.40000 0.8128 -136 12.02 102 0.0229 54 0.2630 -136 21.6 0.60000 0.7843 176 8.317 92 0.0288 62 0.2511 -145 18.4 0.80000 0.7952 174 6.456 87 0.0371 68 0.2600 -155 16.2 1.00000 0.7943 172 5.128 83 0.0426 72 0.2371 -155 14.2 1.20000 0.7943 162 4.365 78 0.0506 73 0.2630 -159 12.8 1.40000 0.7478 156 3.715 72 0.0575 73 0.2630 -169 11.4 1.60000 0.7943 154 3.198 70 0.0630 74 0.2722 -164 10.1 1.80000 0.7762 151 2.851 66 0.0707 77 0.2884 -168 9.1 2.00000 0.7673 148 2.570 63 0.0794 77 0.2851 -168 8.2 2.20000 0.7852 139 2.213 58 0.0860 75 0.3235 178 6.9 2.40000 0.7762 136 1.995 59 0.0891 78 0.3090 180 6.0 2.60000 0.8222 132 1.883 54 0.1000 77 0.3845 176 5.5 2.80000 0.8222 131 1.698 51 0.1047 77 0.4265 172 4.6 3.00000 0.8413 129 1.640 49 0.1109 79 0.4073 177 4.3 3.20000 0.8317 128 1.513 45 0.1174 76 0.4073 169 3.6 3.40000 0.8413 125 1.412 46 0.1244 78 0.3801 168 3.0 3.60000 0.9120 117 1.364 37 0.1348 75 0.4677 162 2.7 3.80000 0.8128 114 1.188 17 0.1303 76 0.4168 156 1.5 4.00000 0.8709 118 1.230 18 0.1462 79 0.4365 167 1.8 4.20000 0.8609 111 1.071 30 0.1479 74 0.4415 -154 0.6 product data sheet typical s parameters: bias condition: v ce = 8 v, i c = 150 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 bipolarics, inc. part number b15v180 0 8 silicon microwave power transistor
product data sheet silicon microwave power transistor emitter emitter base base emitter emitter base base 1 5 2 6 4 8 silicon microwave power transistor bipolarics, inc part number B15V18008 page 3 160 115 3 7 unit: 0.001 inch emitter collector collector emitter 2 0 5 0 240 70 190
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